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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 9, Pages 646–650
(Mi jetpl3272)
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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Zero-bias tunneling anomaly in a two-dimensional electron system with disorder
I. N. Kotel’nikova, S. E. Dizhura, E. N. Morozovaa, È. V. Devyatovb, V. T. Dolgopolovb a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
b Institute of Solid State Physics, Russian Academy of Sciences
Abstract:
The temperature dependence of a zero-bias anomaly in the tunneling conductance of an Al/$\delta$-GaAs tunneling structure with a two-dimensional electron density in the $\delta$-layer of $3.5 \times 10^{12}$ cm$^{-2}$ has been investigated. It has been shown that the respective drop $\Delta\rho(\varepsilon,T)$ in the tunneling density of states $\rho$ near the Fermi level $E_{\mathrm F}$ of the two-dimensional electron system depends logarithmically on the energy $\varepsilon$ within the range of $2.7kT<|\varepsilon|<\hbar/\tau$, where $\varepsilon$ is measured with respect to $E_{\mathrm F}$ and $\tau$ is the momentum relaxation time of two-dimensional electrons. It has been found that the drop depth $\Delta\rho(0,T)/\rho$ is also proportional to $\ln(kT/\varepsilon_{0})$ in the temperature range $T = 0.1$–$20$ K and saturates below $0.1$ K.
Received: 20.09.2012
Citation:
I. N. Kotel’nikov, S. E. Dizhur, E. N. Morozova, È. V. Devyatov, V. T. Dolgopolov, “Zero-bias tunneling anomaly in a two-dimensional electron system with disorder”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:9 (2012), 646–650; JETP Letters, 96:9 (2012), 577–581
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https://www.mathnet.ru/eng/jetpl3272 https://www.mathnet.ru/eng/jetpl/v96/i9/p646
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Abstract page: | 211 | Full-text PDF : | 60 | References: | 55 | First page: | 18 |
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