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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 80, Issue 6, Pages 489–492 (Mi jetpl2128)  
This article is cited in 10 scientific papers (total in 10 papers)

CONDENSED MATTER

Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure

E. M. Dizhura, A. N. Voronovskiia, A. V. Fedorova, I. N. Kotel’nikovb, S. E. Dizhurb

a Institute for High Pressure Physics, Russian Academy of Sciences
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Full-text PDF (309 kB) Citations (10)
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Abstract: The tunnel and lateral conductivities of an Al/GaAs tunnel structure with a surface Si $\delta$-doped layer are measured at liquid-helium temperatures under a hydrostatic pressure of up to 3 GPa. Transition of the $\delta$ layer to the insulating state at a pressure of about 2 GPa is revealed. During this transition, the tunnel resistance increases steadily (on a logarithmic scale) and the zero-bias anomaly in the tunnel resistance exhibits a sharp peak. These results are interpreted in terms of representations of the effect of pressure on the energy-band structure and behavior of DX levels.
Received: 12.08.2004
English version:
Journal of Experimental and Theoretical Physics Letters, 2004, Volume 80, Issue 6, Pages 433–435
DOI: https://doi.org/10.1134/1.1830663
Bibliographic databases:
Document Type: Article
PACS: 62.50.+p, 73.21.-b, 73.30.$+$y, 73.40.Gk
Language: Russian
Citation: E. M. Dizhur, A. N. Voronovskii, A. V. Fedorov, I. N. Kotel’nikov, S. E. Dizhur, “Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 489–492; JETP Letters, 80:6 (2004), 433–435
Citation in format AMSBIB
\Bibitem{DizVorFed04}
\by E.~M.~Dizhur, A.~N.~Voronovskii, A.~V.~Fedorov, I.~N.~Kotel’nikov, S.~E.~Dizhur
\paper Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)--GaAs tunnel structure to the insulating state under pressure
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2004
\vol 80
\issue 6
\pages 489--492
\mathnet{http://mi.mathnet.ru/jetpl2128}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2004JETPL..80..433D}
\transl
\jour JETP Letters
\yr 2004
\vol 80
\issue 6
\pages 433--435
\crossref{https://doi.org/10.1134/1.1830663}
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  • https://www.mathnet.ru/eng/jetpl/v80/i6/p489
    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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