Abstract:
The tunnel and lateral conductivities of an Al/GaAs tunnel structure with a surface Si δ-doped layer are measured at liquid-helium temperatures under a hydrostatic pressure of up to 3 GPa. Transition of the δ layer to the insulating state at a pressure of about 2 GPa is revealed. During this transition, the tunnel resistance increases steadily (on a logarithmic scale) and the zero-bias anomaly in the tunnel resistance exhibits a sharp peak. These results are interpreted in terms of representations of the effect of pressure on the energy-band structure and behavior of DX levels.
Citation:
E. M. Dizhur, A. N. Voronovskii, A. V. Fedorov, I. N. Kotel’nikov, S. E. Dizhur, “Transition of the near-surface δ layer in an Al/δ(Si)–GaAs tunnel structure to the insulating state under pressure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 489–492; JETP Letters, 80:6 (2004), 433–435
\Bibitem{DizVorFed04}
\by E.~M.~Dizhur, A.~N.~Voronovskii, A.~V.~Fedorov, I.~N.~Kotel’nikov, S.~E.~Dizhur
\paper Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)--GaAs tunnel structure to the insulating state under pressure
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2004
\vol 80
\issue 6
\pages 489--492
\mathnet{http://mi.mathnet.ru/jetpl2128}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2004JETPL..80..433D}
\transl
\jour JETP Letters
\yr 2004
\vol 80
\issue 6
\pages 433--435
\crossref{https://doi.org/10.1134/1.1830663}
Linking options:
https://www.mathnet.ru/eng/jetpl2128
https://www.mathnet.ru/eng/jetpl/v80/i6/p489
This publication is cited in the following 10 articles:
I. N. Kotel’nikov, S. E. Dizhur, E. N. Morozova, È. V. Devyatov, V. T. Dolgopolov, JETP Letters, 96:9 (2012), 577–581
Dizhur E., Voronovskii A., Kostyleva I., Kotel'nikov I., Zaitsev-Zotov S., Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, AIP Conference Proceedings, 1399, 2011