Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 80, Issue 6, Pages 489–492 (Mi jetpl2128)  
This article is cited in 10 scientific papers (total in 10 papers)

CONDENSED MATTER

Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure

E. M. Dizhura, A. N. Voronovskiia, A. V. Fedorova, I. N. Kotel’nikovb, S. E. Dizhurb

a Institute for High Pressure Physics, Russian Academy of Sciences
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Full-text PDF (309 kB) Citations (10)
References:
PDF
HTML
Abstract: The tunnel and lateral conductivities of an Al/GaAs tunnel structure with a surface Si $\delta$-doped layer are measured at liquid-helium temperatures under a hydrostatic pressure of up to 3 GPa. Transition of the $\delta$ layer to the insulating state at a pressure of about 2 GPa is revealed. During this transition, the tunnel resistance increases steadily (on a logarithmic scale) and the zero-bias anomaly in the tunnel resistance exhibits a sharp peak. These results are interpreted in terms of representations of the effect of pressure on the energy-band structure and behavior of DX levels.
Received: 12.08.2004
English version:
Journal of Experimental and Theoretical Physics Letters, 2004, Volume 80, Issue 6, Pages 433–435
DOI: https://doi.org/10.1134/1.1830663
Bibliographic databases:
Document Type: Article
PACS: 62.50.+p, 73.21.-b, 73.30.$+$y, 73.40.Gk
Language: Russian
Citation: E. M. Dizhur, A. N. Voronovskii, A. V. Fedorov, I. N. Kotel’nikov, S. E. Dizhur, “Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 489–492; JETP Letters, 80:6 (2004), 433–435
Citation in format AMSBIB
\Bibitem{DizVorFed04}
\by E.~M.~Dizhur, A.~N.~Voronovskii, A.~V.~Fedorov, I.~N.~Kotel’nikov, S.~E.~Dizhur
\paper Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)--GaAs tunnel structure to the insulating state under pressure
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2004
\vol 80
\issue 6
\pages 489--492
\mathnet{http://mi.mathnet.ru/jetpl2128}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2004JETPL..80..433D}
\transl
\jour JETP Letters
\yr 2004
\vol 80
\issue 6
\pages 433--435
\crossref{https://doi.org/10.1134/1.1830663}
Linking options:
  • https://www.mathnet.ru/eng/jetpl2128
  • https://www.mathnet.ru/eng/jetpl/v80/i6/p489
    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Ïèñüìà â Æóðíàë ýêñïåðèìåíòàëüíîé è òåîðåòè÷åñêîé ôèçèêè Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024