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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Ivanov, D. G. Pavel'ev, S. V. Obolensky, E. S. Obolenskaya, “Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1501–1503   |
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2020 |
| 2. |
D. I. Dyukov, A. G. Fefelov, A. V. Korotkov, D. G. Pavel'ev, V. A. Kozlov, E. S. Obolenskaya, A. S. Ivanov, S. V. Obolensky, “Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1158–1162 ; Semiconductors, 54:10 (2020), 1360–1364 |
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2019 |
| 3. |
E. S. Obolenskaya, A. S. Ivanov, D. G. Pavel'ev, V. A. Kozlov, A. P. Vasil'ev, “Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1218–1223 ; Semiconductors, 53:9 (2019), 1192–1197 |
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2018 |
| 4. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, “Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1337–1345 ; Semiconductors, 52:11 (2018), 1448–1456 |
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2017 |
| 5. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Optimization of the superlattice parameters for THz diodes”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1493–1497 ; Semiconductors, 51:11 (2017), 1439–1443 |
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2016 |
| 6. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, Yu. I. Koschurinov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1548–1553 ; Semiconductors, 50:11 (2016), 1526–1531 |
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