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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. È. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, S. S. Mirzai, V. A. Kureshov, D. R. Sabitov, A. A. Marmalyuk, “Investigation into the internal electric-field strength in the active region of InGaN/GaN-based LED structures with various numbers of quantum wells by electrotransmission spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 420–425   ; Semiconductors, 54:4 (2020), 495–500 |
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| 2. |
A. E. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, V. A. Kureshov, D. R. Sabitov, A. A. Marmalyuk, “Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 292–295 ; Semiconductors, 54:3 (2020), 362–365 |
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2019 |
| 3. |
A. È. Aslanyan, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, “Investigation into the distribution of built-in electric fields in LED heterostructures with multiple GaN/InGaN quantum wells by electroreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 493–499 ; Semiconductors, 53:4 (2019), 477–483 |
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2018 |
| 4. |
L. P. Avakyants, P. Yu. Bokov, I. P. Kazakov, M. A. Bazalevsky, P. M. Deev, A. V. Chervyakov, “Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 708–711 ; Semiconductors, 52:7 (2018), 849–852 |
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2017 |
| 5. |
L. P. Avakyants, A. È. Aslanyan, P. Yu. Bokov, K. Yu. Polozhentsev, A. V. Chervyakov, “Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a $p$–$n$ junction”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 198–201 ; Semiconductors, 51:2 (2017), 189–192 |
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| 6. |
L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, “Raman scattering in InP doped by Be$^+$-ion implantation”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 177–181 ; Semiconductors, 51:2 (2017), 168–172 |
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2006 |
| 7. |
S. V. Zabotnov, L. A. Golovan, I. A. Ostapenko, Yu. V. Ryabchikov, A. V. Chervyakov, V. Yu. Timoshenko, P. K. Kashkarov, V. V. Yakovlev, “Femtosecond nanostructuring of silicon surfaces”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:2 (2006), 76–79 ; JETP Letters, 83:2 (2006), 69–71   |
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1985 |
| 8. |
L. P. Avakyants, D. F. Kiselev, A. V. Chervyakov, “Temperature dependence of $\mathrm{BiVO}_{4}$ domain structure”, Fizika Tverdogo Tela, 27:1 (1985), 231–233 |
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1983 |
| 9. |
L. P. Avakyants, D. F. Kiselev, A. V. Chervyakov, “Temperature dependence of $\mathrm{BiVO}_{4}$ refraction index”, Fizika Tverdogo Tela, 25:9 (1983), 2782–2784 |
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