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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs
A. E. Aslanyana, L. P. Avakyantsa, A. V. Chervyakova, A. N. Turkina, V. A. Kureshovb, D. R. Sabitovb, A. A. Marmalyukb a Faculty of Physics, Lomonosov Moscow State University
b "Sigm Plyus" Ltd., Moscow
Abstract:
InGaN/GaN-based LED heterostructures with different numbers of quantum wells are investigated by photocurrent spectroscopy in the wavelength range of 350 – 500 nm. As a result of the analysis of a series of spectra obtained at various $p$–$n$-junction biases, the effect of changing photocurrent direction when varying the excitation wavelength (photoreversible effect) is discovered. The range of $p$–$n$-junction biases for which this effect is observed in structures with different numbers of quantum wells in the active region is established.
Keywords:
LED heterostructures, photocurrent, quantum well, gallium nitride.
Received: 28.10.2019 Revised: 06.11.2019 Accepted: 06.11.2019
Citation:
A. E. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, V. A. Kureshov, D. R. Sabitov, A. A. Marmalyuk, “Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 292–295; Semiconductors, 54:3 (2020), 362–365
Linking options:
https://www.mathnet.ru/eng/phts5267 https://www.mathnet.ru/eng/phts/v54/i3/p292
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