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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. Poloskin, “Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 45   ; Semiconductors, 54:1 (2020), 46–54 |
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2018 |
| 2. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1578 ; Semiconductors, 52:13 (2018), 1677–1685 |
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| 3. |
M. A. Elistratova, D. S. Poloskin, D. N. Goryachev, I. B. Zakharova, O. M. Sreseli, “Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 921–925 ; Semiconductors, 52:8 (2018), 1051–1055 |
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| 4. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2017 |
| 5. |
I. V. Grekhov, A. G. Lyublinsky, E. M. Mikhailov, D. S. Poloskin, A. A. Skidanov, “Analysis of integrated thyristor switching-off by a reverse gate pulse current”, Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017), 1682–1686 ; Tech. Phys., 62:11 (2017), 1684–1688 |
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| 6. |
V. V. Emtsev, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Radiation-produced defects in germanium: experimental data and models of defects”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1632–1646 ; Semiconductors, 51:12 (2017), 1571–1587 |
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2016 |
| 7. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, D. S. Poloskin, “Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1313–1319 ; Semiconductors, 50:10 (2016), 1291–1298 |
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| 8. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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2011 |
| 9. |
N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, “Suppression of the virtual anderson transition in the impurity band of doped quantum well structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011), 120–124 ; JETP Letters, 94:2 (2011), 116–120   |
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2007 |
| 10. |
N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, “Virtual Anderson transition in a narrow impurity band of doped $p$-GaAs/AlGaAs layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007), 202–207 ; JETP Letters, 85:3 (2007), 169–173 |
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2004 |
| 11. |
N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, A. V. Chernyaev, D. V. Shamshur, “Transition from strong to weak localization in the split-off impurity band in two-dimensional <i>p</i>-GaAs/AlGaAs structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:1 (2004), 36–40 ; JETP Letters, 80:1 (2004), 30–34 |
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1985 |
| 12. |
N. T. Bagraev, V. A. Mashkov, D. S. Poloskin, “Spin-dependent negative photo-conductivity in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985), 568–573 |
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