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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
A. V. Bakulin, S. E. Kul'kova, “First-principle investigation of the (001) surface reconstructions of GaSb and InSb semiconductors”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 631–642 ; Semiconductors, 54:7 (2020), 742–753 |
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A. A. Fuks, A. V. Bakulin, S. E. Kul'kova, N. A. Valisheva, A. V. Postnikov, “Effect of oxygen and fluorine absorption on the electronic structure of the InSb(111) surface”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 3–12 ; Semiconductors, 54:1 (2020), 1–10 |
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2019 |
3. |
A. V. Bakulin, S. E. Kul'kova, “Adhesion at Ta(Mo)/NiTi interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019), 37–41 ; Tech. Phys. Lett., 45:6 (2019), 620–624 |
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2017 |
4. |
A. M. Latyshev, A. V. Bakulin, S. E. Kul'kova, “Adsorption of oxygen on low-index surfaces of Ti$_{3}$Al alloy”, Fizika Tverdogo Tela, 59:9 (2017), 1828–1842 ; Phys. Solid State, 59:9 (2017), 1852–1866 |
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2016 |
5. |
A. V. Bakulin, S. E. Kul'kova, “Halogen diffusion on a Ga-stabilized $\zeta$-GaAs(001)–(4 $\times$ 2) surface”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1153–1158 ; Semiconductors, 50:9 (2016), 1131–1136 |
6. |
A. V. Bakulin, S. E. Kul'kova, “Halogen adsorption at an As-stabilized $\beta$2–GaAs(001)–(2$\times$4) surface”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 171–179 ; Semiconductors, 50:2 (2016), 171–179 |
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2010 |
7. |
O. E. Tereshchenko, S. V. Eremeev, A. V. Bakulin, S. E. Kul'kova, “Reconstruction dependence of the etching and passivation of the GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010), 511–516 ; JETP Letters, 91:9 (2010), 466–470 |
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Organisations |
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