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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 171–179
(Mi phts6533)
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This article is cited in 5 scientific papers (total in 5 papers)
Surface, interfaces, thin films
Halogen adsorption at an As-stabilized $\beta$2–GaAs(001)–(2$\times$4) surface
A. V. Bakulinab, S. E. Kul'kovaab a Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia
b Tomsk State University
Abstract:
Halogen (F, Cl, Br, and I) adsorption at an As-stabilized GaAs (001) surface with the $\beta$2–(2$\times$4) reconstruction is studied using the plane-wave projected-augmented wave method. The effect of halogens on the structural and electronic characteristics of the semiconductor surface is analyzed. The $T'_{2}$ site at the missing row edge is shown to be the energetically most favorable for the adsorption of F, Cl, and Br, whereas I prefers the $H_3$ site between adjacent arsenic dimers in the third layer from the surface. Ga-halogen bond formation suggests that charge is transferred via the depletion of occupied orbitals of the As-dimer surface atoms, which leads to the weakening of Ga–As bonds in the substrate. The weakening of bonds between substrate-surface atoms due to the interaction of halogens with the surface is estimated.
Keywords:
Arsenic, GaAs, Gallium, Halogen, Local Density Approximation.
Received: 16.06.2015 Accepted: 18.06.2015
Citation:
A. V. Bakulin, S. E. Kul'kova, “Halogen adsorption at an As-stabilized $\beta$2–GaAs(001)–(2$\times$4) surface”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 171–179; Semiconductors, 50:2 (2016), 171–179
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https://www.mathnet.ru/eng/phts6533 https://www.mathnet.ru/eng/phts/v50/i2/p171
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