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Publications in Math-Net.Ru |
Citations |
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2012 |
| 1. |
T. N. Mamedov, A. S. Baturin, V. N. Duginov, K. I. Gritsaj, R. Khasanov, A. Maisuradze, A. V. Stoykov, “Relaxation of the Shallow Acceptor Center in Germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:12 (2012), 744–747   ; JETP Letters, 95:12 (2012), 662–665   |
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2008 |
| 2. |
M. Balasoiu, S. G. Barsov, D. Bica, L. Vekas, S. I. Vorob'ev, K. I. Gritsaj, V. N. Duginov, V. A. Zhukov, E. N. Komarov, V. P. Koptev, S. A. Kotov, T. N. Mamedov, C. Petrescu, G. V. Shcherbakov, “μSR study of the properties of Fe<sub>3</sub>O<sub>4</sub>-based nanostructured magnetic systems”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:3 (2008), 243–247 ; JETP Letters, 88:3 (2008), 210–213 |
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2004 |
| 3. |
T. N. Mamedov, D. Andreica, D. G. Andrianov, D. Herlach, V. N. Gorelkin, K. I. Gritsaj, V. A. Zhukov, A. V. Stoikov, U. Zimmermann, “The effect of uniaxial static pressure on the behavior of an aluminum acceptor impurity in silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:5 (2004), 385–388 ; JETP Letters, 80:5 (2004), 339–342 |
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T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Ionization mechanisms of aluminum acceptor impurity in silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:1 (2004), 25–29 ; JETP Letters, 79:1 (2004), 21–24 |
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2002 |
| 5. |
T. N. Mamedov, A. S. Baturin, D. Herlach, O. D. Maslov, A. V. Stoikov, U. Zimmermann, “Measurement of the magnetic moment of a negative muon in zinc and cadmium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:12 (2002), 821–824 ; JETP Letters, 76:12 (2002), 693–696 |
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T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Interactions of $_\mu$Al acceptor impurity in weakly and heavily doped silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:7 (2002), 515–519 ; JETP Letters, 76:7 (2002), 440–443 |
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2001 |
| 7. |
T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, K. I. Gritsaj, V. N. Duginov, O. Kormann, J. Major, A. V. Stoikov, U. Zimmermann, “Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:12 (2001), 759–762 ; JETP Letters, 73:12 (2001), 674–677 |
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