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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 1, Pages 25–29
(Mi jetpl2199)
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This article is cited in 3 scientific papers (total in 3 papers)
ATOMS, SPECTRA, RADIATIONS
Ionization mechanisms of aluminum acceptor impurity in silicon
T. N. Mamedova, D. G. Andrianovb, D. Herlachc, V. N. Gorelkind, A. V. Stoikova, U. Zimmermannc a Joint Institute for Nuclear Research, Dubna, Moskovskaya obl.
b JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry
c Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
d Moscow Institute of Physics and Technology
Abstract:
Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×1013, 2.7×1013, and 2.3×1015cm−3) and boron (1.3×1015cm−3) impurities, μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ≲1015cm−3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ∼105 to ∼106s−1 in the temperature range 45–55 K.
Received: 12.11.2003
Citation:
T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Ionization mechanisms of aluminum acceptor impurity in silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:1 (2004), 25–29; JETP Letters, 79:1 (2004), 21–24
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https://www.mathnet.ru/eng/jetpl2199 https://www.mathnet.ru/eng/jetpl/v79/i1/p25
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Abstract page: | 275 | Full-text PDF : | 65 | References: | 47 |
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