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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 7, Pages 515–519
(Mi jetpl2944)
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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Interactions of $_\mu$Al acceptor impurity in weakly and heavily doped silicon
T. N. Mamedova, D. G. Andrianovb, D. Herlachc, V. N. Gorelkind, A. V. Stoikova, U. Zimmermannc a Joint Institute for Nuclear Research, Dubna, Moskovskaya obl.
b JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry
c Paul Scherrer Institute
d Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
Abstract:
The interactions of the aluminum acceptor impurity in silicon are investigated using polarized negative muons. The polarization of negative muons is studied as a function of temperature on crystalline silicon samples with phosphorus ($1.6\times10^{13}\,$cm$^{-3}$) and boron ($4.1\times10^{18}\,$cm$^{-3}$) impurities. The measurements are performed in a magnetic field of 4.1 kG perpendicular to the muon spin, in the temperature range from 4 to 300 K. The experimental results show that, in phosphorus-doped $n$-type silicon, an $_\mu$Al acceptor center is ionized in the temperature range $T>50\,$K. For boron-doped silicon, the temperature dependence of the shift of the muon spin precession frequency is found to deviate from the $1/T$ Curie law in the temperature range $T\lesssim50\,$K. The interactions of a $_\mu$Al acceptor that may be responsible for the effects observed in the experiment are analyzed.
Received: 25.07.2002 Revised: 26.08.2002
Citation:
T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Interactions of $_\mu$Al acceptor impurity in weakly and heavily doped silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:7 (2002), 515–519; JETP Letters, 76:7 (2002), 440–443
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https://www.mathnet.ru/eng/jetpl2944 https://www.mathnet.ru/eng/jetpl/v76/i7/p515
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Abstract page: | 145 | Full-text PDF : | 48 | References: | 26 |
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