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Pashkovskii, A B

Statistics Math-Net.Ru
Total publications: 15
Scientific articles: 15

Number of views:
This page:272
Abstract pages:2000
Full texts:725
References:261
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https://www.mathnet.ru/eng/person20905
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Publications in Math-Net.Ru Citations
2021
1. S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Sherbakov, “A millimeter-wave field-effect transistor based on a pseudomorphic heterostructure with an additional potential barrier”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  52–54  mathnet  elib; Tech. Phys. Lett., 47:4 (2021), 329–332
2019
2. A. B. Pashkovskii, I. V. Kulikova, V. G. Lapin, V. M. Lukashin, N. K. Pristupchik, L. V. Manchenko, V. G. Kalina, M. I. Lopin, A. D. Zakurdaev, “Thermal surface interface for high-power arsenide–gallium heterostructure fets”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019),  252–257  mathnet  elib; Tech. Phys., 64:2 (2019), 220–225
3. A. B. Pashkovskii, S. A. Bogdanov, “Localization of upper-valley electrons in a narrow-bandgap channel: a possible additional mechanism of current increase in DA-DpHEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  11–14  mathnet  elib; Tech. Phys. Lett., 45:10 (2019), 1020–1023 1
2018
4. A. B. Pashkovskii, S. I. Novikov, V. G. Lapin, V. M. Lukashin, Ya. B. Martynov, “Features of the upsurge in drift velocity of electrons in DA-pHEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  103–110  mathnet  elib; Tech. Phys. Lett., 44:9 (2018), 804–807 3
2017
5. A. B. Pashkovskii, “Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  623–631  mathnet  elib; Semiconductors, 51:5 (2017), 594–603
6. A. B. Pashkovskii, “Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  453–460  mathnet  elib; Semiconductors, 51:4 (2017), 430–437
7. A. B. Pashkovskii, S. I. Novikov, V. G. Lapin, V. M. Lukashin, “A two-dimensional electron gas in donor–acceptor doped backward heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  42–51  mathnet  elib; Tech. Phys. Lett., 43:6 (2017), 562–566 1
2016
8. A. A. Borisov, S. S. Zyrin, A. A. Makovetskaya, V. I. Novoselets, A. B. Pashkovskii, N. D. Ursulyak, “High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:18 (2016),  88–94  mathnet  elib; Tech. Phys. Lett., 42:9 (2016), 970–972 2
9. A. A. Borisov, K. S. Zhuravlev, S. S. Zyrin, V. G. Lapin, V. M. Lukashin, A. A. Makovetskaya, V. I. Novoselets, A. B. Pashkovskii, A. I. Toropov, N. D. Ursulyak, S. V. Sherbakov, “Studying average electron drift velocity in pHEMT structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:16 (2016),  41–47  mathnet  elib; Tech. Phys. Lett., 42:8 (2016), 848–851 5
2011
10. A. B. Pashkovskii, “Splitting of the resonance levels of double-barrier structures in a high microwave electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  620–624  mathnet; JETP Letters, 93:10 (2011), 559–563  isi  scopus 9
2009
11. A. B. Pashkovskii, “High transparency of a two-photon scattering channel in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:1 (2009),  32–37  mathnet; JETP Letters, 89:1 (2009), 30–34  isi  scopus 19
2005
12. A. B. Pashkovskii, “Parity and abrupt broadening of resonance levels in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:4 (2005),  228–233  mathnet; JETP Letters, 82:4 (2005), 210–214  isi  scopus 21
2002
13. E. I. Golant, A. B. Pashkovskii, “High intensity of interband transitions in double-barrier structures with a high-frequency electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002),  92–95  mathnet; JETP Letters, 75:2 (2002), 83–86  scopus
2001
14. A. B. Pashkovskii, “Effects of virtual transitions in a high-frequency field on electron transport in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:11 (2001),  698–701  mathnet; JETP Letters, 73:11 (2001), 617–620  scopus 1
1999
15. E. I. Golant, A. B. Pashkovskii, “Application restrictions for two-level models of the resonance interaction of electrons with an alternating electric field in two-barrier structures”, TMF, 120:2 (1999),  332–341  mathnet  zmath; Theoret. and Math. Phys., 120:2 (1999), 1094–1101  isi 11

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