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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Sherbakov, “A millimeter-wave field-effect transistor based on a pseudomorphic heterostructure with an additional potential barrier”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 52–54 ; Tech. Phys. Lett., 47:4 (2021), 329–332 |
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2019 |
2. |
A. B. Pashkovskii, I. V. Kulikova, V. G. Lapin, V. M. Lukashin, N. K. Pristupchik, L. V. Manchenko, V. G. Kalina, M. I. Lopin, A. D. Zakurdaev, “Thermal surface interface for high-power arsenide–gallium heterostructure fets”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 252–257 ; Tech. Phys., 64:2 (2019), 220–225 |
3. |
A. B. Pashkovskii, S. A. Bogdanov, “Localization of upper-valley electrons in a narrow-bandgap channel: a possible additional mechanism of current increase in DA-DpHEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 11–14 ; Tech. Phys. Lett., 45:10 (2019), 1020–1023 |
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2018 |
4. |
A. B. Pashkovskii, S. I. Novikov, V. G. Lapin, V. M. Lukashin, Ya. B. Martynov, “Features of the upsurge in drift velocity of electrons in DA-pHEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018), 103–110 ; Tech. Phys. Lett., 44:9 (2018), 804–807 |
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2017 |
5. |
A. B. Pashkovskii, “Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 623–631 ; Semiconductors, 51:5 (2017), 594–603 |
6. |
A. B. Pashkovskii, “Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 453–460 ; Semiconductors, 51:4 (2017), 430–437 |
7. |
A. B. Pashkovskii, S. I. Novikov, V. G. Lapin, V. M. Lukashin, “A two-dimensional electron gas in donor–acceptor doped backward heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 42–51 ; Tech. Phys. Lett., 43:6 (2017), 562–566 |
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2016 |
8. |
A. A. Borisov, S. S. Zyrin, A. A. Makovetskaya, V. I. Novoselets, A. B. Pashkovskii, N. D. Ursulyak, “High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:18 (2016), 88–94 ; Tech. Phys. Lett., 42:9 (2016), 970–972 |
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9. |
A. A. Borisov, K. S. Zhuravlev, S. S. Zyrin, V. G. Lapin, V. M. Lukashin, A. A. Makovetskaya, V. I. Novoselets, A. B. Pashkovskii, A. I. Toropov, N. D. Ursulyak, S. V. Sherbakov, “Studying average electron drift velocity in pHEMT structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:16 (2016), 41–47 ; Tech. Phys. Lett., 42:8 (2016), 848–851 |
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2011 |
10. |
A. B. Pashkovskii, “Splitting of the resonance levels of double-barrier structures in a high microwave electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 620–624 ; JETP Letters, 93:10 (2011), 559–563 |
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2009 |
11. |
A. B. Pashkovskii, “High transparency of a two-photon scattering channel in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:1 (2009), 32–37 ; JETP Letters, 89:1 (2009), 30–34 |
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2005 |
12. |
A. B. Pashkovskii, “Parity and abrupt broadening of resonance levels in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:4 (2005), 228–233 ; JETP Letters, 82:4 (2005), 210–214 |
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2002 |
13. |
E. I. Golant, A. B. Pashkovskii, “High intensity of interband transitions in double-barrier structures with a high-frequency electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002), 92–95 ; JETP Letters, 75:2 (2002), 83–86 |
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2001 |
14. |
A. B. Pashkovskii, “Effects of virtual transitions in a high-frequency field on electron transport in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:11 (2001), 698–701 ; JETP Letters, 73:11 (2001), 617–620 |
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1999 |
15. |
E. I. Golant, A. B. Pashkovskii, “Application restrictions for two-level models of the resonance interaction of electrons with an alternating electric field in two-barrier structures”, TMF, 120:2 (1999), 332–341 ; Theoret. and Math. Phys., 120:2 (1999), 1094–1101 |
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Organisations |
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