Abstract:
We analyze the applicability of different variants of the two-level approximation in the problem of electron transitions in a two-barrier structure with current pumping in a resonant electric field of finite amplitude. We show that the solution obtained by a direct iteration of the perturbation method of the first order in the field amplitude can be essentially continued outside the convergency domain of the iteration procedure. On the other hand, the two-level approximation becomes invalid at field amplitudes much smaller than commonly assumed ones because of the influence of side satellites, the nonresonant components of the wave function.
Citation:
E. I. Golant, A. B. Pashkovskii, “Application restrictions for two-level models of the resonance interaction of electrons with an alternating electric field in two-barrier structures”, TMF, 120:2 (1999), 332–341; Theoret. and Math. Phys., 120:2 (1999), 1094–1101
\Bibitem{GolPas99}
\by E.~I.~Golant, A.~B.~Pashkovskii
\paper Application restrictions for two-level models of the resonance interaction of electrons with an alternating electric field in two-barrier structures
\jour TMF
\yr 1999
\vol 120
\issue 2
\pages 332--341
\mathnet{http://mi.mathnet.ru/tmf780}
\crossref{https://doi.org/10.4213/tmf780}
\zmath{https://zbmath.org/?q=an:0991.81132}
\transl
\jour Theoret. and Math. Phys.
\yr 1999
\vol 120
\issue 2
\pages 1094--1101
\crossref{https://doi.org/10.1007/BF02557416}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000083500600013}
Linking options:
https://www.mathnet.ru/eng/tmf780
https://doi.org/10.4213/tmf780
https://www.mathnet.ru/eng/tmf/v120/i2/p332
This publication is cited in the following 11 articles:
Pashkovskii A.B., “Specific Features of Ballistic Electron Transport in Double-Level Open Systems in a Large-Amplitude High-Frequency Electric Field”, Semiconductors, 51:5 (2017), 594–603
Pashkovskii A.B., “Dynamics of Electron Scattering in Absolutely Transparent Channels in Three-Barrier Structures in the Case of Two-Photon Transitions”, Semiconductors, 51:4 (2017), 430–437
Chuenkov V.A., “On the Feasibility of High-Frequency Radiation Generation in Two-Barrier Rtd Structures with Asymmetric Barriers of Finite Height and Width”, Bull. Lebedev Phys. Inst., 40:7 (2013), 191–197
Chuenkov V.A., “Dynamic Characteristics of Double-Barrier Nanostructures with Asymmetric Barriers of Finite Height and Widths in a Strong Ac Electric Field”, Semiconductors, 47:12 (2013), 1641–1651
Tkach V M., Seti J.O., Voitsekhivska O.M., “Evolution of Electron Spectrum in Symmetric Two-Barrier Open Nanostructure Under the Influence of Strong Electromagnetic Field”, Ukr. J. Phys. Opt., 13:1 (2012), 36–44
Tkach M.V., Seti J.O., Voitsekhivska O.M., “Quasi-Stationary States of Electrons Interacting with Strong Electromagnetic Field in Two-Barrier Resonance Tunnel Nano-Structure”, Condens. Matter Phys., 15:3 (2012), 33703
A. B. Pashkovskii, “Splitting of the resonance levels of double-barrier structures in a high microwave electric field”, JETP Letters, 93:10 (2011), 559–563
Pashkovskii A.B., “Resonance Propagation of Electrons through Three-Barrier Structures in a Two-Frequency Electric Field”, Semiconductors, 45:6 (2011), 743–748
JETP Letters, 89:1 (2009), 30–34
Pashkovskii, AB, “Electron passage through nanostructures with a parabolic potential in a strong homogeneous high-frequency electric field”, Technical Physics Letters, 32:6 (2006), 463
Pashkovskii, AB, “Effects of virtual transitions in a high-frequency field on electron transport in triple-barrier structures”, JETP Letters, 73:11 (2001), 617