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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 16, Pages 41–47 (Mi pjtf6327)  
This article is cited in 5 scientific papers (total in 5 papers)

Studying average electron drift velocity in pHEMT structures

A. A. Borisova, K. S. Zhuravlevb, S. S. Zyrina, V. G. Lapina, V. M. Lukashina, A. A. Makovetskayaa, V. I. Novoseletsa, A. B. Pashkovskiia, A. I. Toropovb, N. D. Ursulyaka, S. V. Sherbakova

a Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (382 kB) Citations (5)
Abstract: Small-signal characteristics of pseudomorphic high-electron-mobility transistors based on donor–acceptor doped heterostructures (DA-pHEMTs) are compared to those of analogous transistors (pHEMTs) based on traditional heterostructures without acceptor doping. It is established that DA-pHEMTs, under otherwise equal conditions, exhibit (despite lower values of the low-field mobility of electrons) a much higher gain compared to that of usual pHEMTs. This behavior is related to the fact that the average electron drift velocity under the gate in DA-pHEMTs is significantly (1.4–1.6 times) higher than that in pHEMTs. This increase in the electron drift velocity is explained by two main factors of comparable influence: (i) decreasing role of transverse spatial transfer, which is caused by enhanced localization of hot electrons in the channel, and (ii) reduced scattering of hot electrons, which is caused by their strong confinement (dimensional quantization) in the potential well of DA-pHEMT heterostructures.
Received: 22.03.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 8, Pages 848–851
DOI: https://doi.org/10.1134/S1063785016080198
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Borisov, K. S. Zhuravlev, S. S. Zyrin, V. G. Lapin, V. M. Lukashin, A. A. Makovetskaya, V. I. Novoselets, A. B. Pashkovskii, A. I. Toropov, N. D. Ursulyak, S. V. Sherbakov, “Studying average electron drift velocity in pHEMT structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:16 (2016), 41–47; Tech. Phys. Lett., 42:8 (2016), 848–851
Citation in format AMSBIB
\Bibitem{BorZhuZyr16}
\by A.~A.~Borisov, K.~S.~Zhuravlev, S.~S.~Zyrin, V.~G.~Lapin, V.~M.~Lukashin, A.~A.~Makovetskaya, V.~I.~Novoselets, A.~B.~Pashkovskii, A.~I.~Toropov, N.~D.~Ursulyak, S.~V.~Sherbakov
\paper Studying average electron drift velocity in pHEMT structures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 16
\pages 41--47
\mathnet{http://mi.mathnet.ru/pjtf6327}
\elib{https://elibrary.ru/item.asp?id=27368294}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 8
\pages 848--851
\crossref{https://doi.org/10.1134/S1063785016080198}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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