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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
V. S. Yuferev, M. E. Levinshteĭn, P. A. Ivanov, Jon Q. Zhang, John W. Palmour, “Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1243–1248   ; Semiconductors, 51:9 (2017), 1194–1199 |
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T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1125–1130 ; Semiconductors, 51:8 (2017), 1081–1086 |
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| 3. |
S. N. Yurkov, T. T. Ìnatsakanov, M. E. Levinshteĭn, A. G. Tandoev, J. W. Palmour, “Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 234–239 ; Semiconductors, 51:2 (2017), 225–231 |
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2016 |
| 4. |
M. E. Levinshteĭn, P. A. Ivanov, Q. J. Zhang, J. W. Palmour, “Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 668–673 ; Semiconductors, 50:5 (2016), 656–661 |
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| 5. |
M. E. Levinshteĭn, T. T. Ìnatsakanov, S. N. Yurkov, A. G. Tandoev, Sei-Hyung Ryu, J. W. Palmour, “High-voltage silicon-carbide thyristor with an $n$-type blocking base”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 408–414 ; Semiconductors, 50:3 (2016), 404–410 |
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