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Publications in Math-Net.Ru |
Citations |
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2018 |
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A. V. Belolipetskiy, M. O. Nestoklon, I. N. Yassievich, “Simulation of electron and hole states in Si nanocrystals in a SiO$_{2}$ matrix: choice of parameters of the empirical tight-binding method”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1145–1149   ; Semiconductors, 52:10 (2018), 1264–1268 |
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2016 |
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O. B. Gusev, A. V. Belolipetskiy, I. N. Yassievich, A. V. Kukin, E. E. Terukova, E. I. Terukov, “Lifetime of excitons localized in Si nanocrystals in amorphous silicon”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 639–642 ; Semiconductors, 50:5 (2016), 627–631 |
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