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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 639–642
(Mi phts6465)
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Amorphous, glassy, organic semiconductors
Lifetime of excitons localized in Si nanocrystals in amorphous silicon
O. B. Guseva, A. V. Belolipetskiya, I. N. Yassievicha, A. V. Kukinb, E. E. Terukovab, E. I. Terukovb a Ioffe Institute, St. Petersburg, Russia
b R&D Center of thin-film technology for energetics under Ioffe Physicotechnical Institute, St. Petersburg, Russia
Abstract:
The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state of the amorphous matrix.
Keywords:
Amorphous Silicon, Amorphous Matrix, Resonant Tunneling, Silicon Nanocrystals, Tail State.
Received: 01.10.2015 Accepted: 06.10.2015
Citation:
O. B. Gusev, A. V. Belolipetskiy, I. N. Yassievich, A. V. Kukin, E. E. Terukova, E. I. Terukov, “Lifetime of excitons localized in Si nanocrystals in amorphous silicon”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 639–642; Semiconductors, 50:5 (2016), 627–631
Linking options:
https://www.mathnet.ru/eng/phts6465 https://www.mathnet.ru/eng/phts/v50/i5/p639
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Abstract page: | 22 | Full-text PDF : | 11 |
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