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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev, “Electromigration effect on vacancy islands nucleation on Si(100) surface during sublimation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 805–809   ; Semiconductors, 53:6 (2019), 795–799 |
| 2. |
A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev, “Micro-pits evolution on large terraces of Si(111) surface during high-temperature annealing”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 456–461 ; Semiconductors, 53:4 (2019), 434–438 |
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2017 |
| 3. |
S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev, “Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 212–215 ; Semiconductors, 51:2 (2017), 203–206 |
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2016 |
| 4. |
S. V. Sitnikov, A. V. Latyshev, S. S. Kosolobov, “Atomic steps on an ultraflat Si(111) surface upon sublimation”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 607–611 ; Semiconductors, 50:5 (2016), 596–600 |
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