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This article is cited in 4 scientific papers (total in 4 papers)
Surface, interfaces, thin films
Micro-pits evolution on large terraces of Si(111) surface during high-temperature annealing
A. S. Petrova, S. V. Sitnikova, S. S. Kosolobovb, A. V. Latyshevac a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Skolkovo Institute of Science and Technology
c Novosibirsk State University
Abstract:
We have investigated in situ the morphological transformation of the Si(111) surfaces with micro-pits at large terraces during high-temperature annealing at $T$ = 1200–1400$^{\circ}$C. Experimental observation of the micro-pits kinetic decay have been performed by means of ultrahigh vacuum reflection electron microscopy. Focused ion beam system have been used for micro-pits creation at Si(111) terraces of large size. We have found that kinetic of micro-pit decay processes is affected by two dimensional vacancy islands nucleation at the micro-pit bottom when the micro-pit reaches the critical lateral size. The simple theoretical model has been proposed for describing the changes of the lateral size of micro-pit. The temperature dependence of two-dimensional vacancy islands nucleation frequency at micro-pit bottom is found to be described by the activation energy of 4.1 $\pm$ 0.1 eV.
Received: 22.10.2018 Revised: 29.10.2018 Accepted: 29.10.2018
Citation:
A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev, “Micro-pits evolution on large terraces of Si(111) surface during high-temperature annealing”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 456–461; Semiconductors, 53:4 (2019), 434–438
Linking options:
https://www.mathnet.ru/eng/phts5532 https://www.mathnet.ru/eng/phts/v53/i4/p456
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