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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 607–611
(Mi phts6459)
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This article is cited in 1 scientific paper (total in 1 paper)
Surface, interfaces, thin films
Atomic steps on an ultraflat Si(111) surface upon sublimation
S. V. Sitnikova, A. V. Latyshevba, S. S. Kosolobova a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
The kinetics of atomic steps on an ultraflat Si(111) surface is studied by in situ ultrahigh-vacuum reflection electron microscopy at temperatures of 1050–1350$^\circ$C. For the first time it is experimentally shown that the rate of displacement of an atomic step during sublimation nonlinearly depends on the width of the adjacent terrace. It is established that the atomic mechanism of mass-transport processes at the surface at temperatures higher than 1200$^\circ$C is controlled by nucleation and the diffusion of surface vacancies rather than of adsorbed Si atoms. The studies make it possible to estimate the activation energy of the dissolution of vacancies from the surface into the bulk of Si. The estimated activation energy is (4.3 $\pm$ 0.05) eV.
Keywords:
Activation Energy, Interstitial Atom, Atomic Mechanism, Atomic Step, Surface Vacancy.
Received: 10.11.2015 Accepted: 16.11.2015
Citation:
S. V. Sitnikov, A. V. Latyshev, S. S. Kosolobov, “Atomic steps on an ultraflat Si(111) surface upon sublimation”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 607–611; Semiconductors, 50:5 (2016), 596–600
Linking options:
https://www.mathnet.ru/eng/phts6459 https://www.mathnet.ru/eng/phts/v50/i5/p607
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