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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
D. S. Frolov, G. E. Yakovlev, V. I. Zubkov, “Technique for the electrochemical capacitance–voltage profiling of heavily doped structures with a sharp doping profile”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 281–286   ; Semiconductors, 53:2 (2019), 268–272 |
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| 2. |
G. E. Yakovlev, I. A. Nyapshaev, I. S. Shahray, D. A. Andronikov, V. I. Zubkov, E. I. Terukov, “Through concentration profiling of heterojunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019), 39–42 ; Tech. Phys. Lett., 45:9 (2019), 890–893 |
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2018 |
| 3. |
G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880 ; Semiconductors, 52:8 (2018), 1004–1011 |
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2017 |
| 4. |
M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, V. I. Zubkov, D. S. Frolov, G. E. Yakovlev, A. V. Kudrin, “Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence”, Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017), 1539–1544 ; Tech. Phys., 62:10 (2017), 1545–1550 |
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2016 |
| 5. |
G. E. Yakovlev, D. S. Frolov, A. V. Zubkova, E. E. Levina, V. I. Zubkov, A. V. Solomonov, O. K. Sterlyadkin, S. A. Sorokin, “Investigation of ion-implanted photosensitive silicon structures by electrochemical capacitance–voltage profiling”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 324–330 ; Semiconductors, 50:3 (2016), 320–325 |
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