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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Current transmission mechanisms in the semiconductor structure of a photoelectric transducer with an $n^{+}$–$p$ junction and an antireflection porous silicon film formed by color etching”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 737–743   ; Tech. Phys., 64:5 (2019), 686–692 |
| 2. |
V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 24–27 ; Tech. Phys. Lett., 45:2 (2019), 145–148 |
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2018 |
| 3. |
V. V. Tregulov, “Features of the frequency dependence of capacitance–voltage characteristics of a semiconductor structure of a photoelectric converter based on a $p$–$n$ junction with an antireflective film of porous silicon”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1863–1867 ; Tech. Phys., 63:12 (2018), 1824–1828 |
| 4. |
V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Study of current flow mechanisms in a CdS/$por$-Si/$p$-Si heterostructure”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 751–756 ; Semiconductors, 52:7 (2018), 891–896 |
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2017 |
| 5. |
V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017), 3–9 ; Tech. Phys. Lett., 43:11 (2017), 955–957 |
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2016 |
| 6. |
V. V. Tregulov, V. A. Stepanov, V. G. Litvinov, A. V. Ermachikhin, “Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an $n^{+}$–$p$-junction and an antireflective porous silicon film”, Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016), 91–94 ; Tech. Phys., 61:11 (2016), 1694–1697 |
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| 7. |
O. S. Talarico, V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 16–22 ; Tech. Phys. Lett., 42:11 (2016), 1107–1109 |
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2012 |
| 8. |
V. V. Tregulov, “A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics”, University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 3, 124–132 |
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2011 |
| 9. |
V. V. Tregulov, V. A. Stepanov, “Study of surface states in photoelectric solar energy converters based on a CdS/Si(p) heterostructure”, University proceedings. Volga region. Physical and mathematical sciences, 2011, no. 3, 140–150 |
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