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This article is cited in 3 scientific papers (total in 3 papers)
Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon
V. V. Tregulova, V. G. Litvinovb, A. V. Ermachikhinb a Ryazan State University S. A. Esenin
b Ryazan State Radio Engineering University
Abstract:
Defects in a semiconductor structure of a photoelectric converter of solar energy based on a $p$–$n$ junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.
Received: 27.06.2017
Citation:
V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017), 3–9; Tech. Phys. Lett., 43:11 (2017), 955–957
Linking options:
https://www.mathnet.ru/eng/pjtf6079 https://www.mathnet.ru/eng/pjtf/v43/i21/p3
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Abstract page: | 27 | Full-text PDF : | 6 |
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