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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 21, Pages 3–9
DOI: https://doi.org/10.21883/PJTF.2017.21.45155.16929 (Mi pjtf6079) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

V. V. Tregulova, V. G. Litvinovb, A. V. Ermachikhinb

a Ryazan State University S. A. Esenin
b Ryazan State Radio Engineering University
Full-text PDF (118 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2017.21.45155.16929
Abstract: Defects in a semiconductor structure of a photoelectric converter of solar energy based on a $p$–$n$ junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.
Received: 27.06.2017
English version:
Technical Physics Letters, 2017, Volume 43, Issue 11, Pages 955–957
DOI: https://doi.org/10.1134/S1063785017110128
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017), 3–9; Tech. Phys. Lett., 43:11 (2017), 955–957
Citation in format AMSBIB
\Bibitem{TreLitErm17}
\by V.~V.~Tregulov, V.~G.~Litvinov, A.~V.~Ermachikhin
\paper Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 21
\pages 3--9
\mathnet{http://mi.mathnet.ru/pjtf6079}
\crossref{https://doi.org/10.21883/PJTF.2017.21.45155.16929}
\elib{https://elibrary.ru/item.asp?id=30463255}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 11
\pages 955--957
\crossref{https://doi.org/10.1134/S1063785017110128}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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