|
This article is cited in 1 scientific paper (total in 1 paper)
Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching
V. V. Tregulova, V. G. Litvinovb, A. V. Ermachikhinb a Ryazan State University S. A. Esenin
b Ryazan State Radio Engineering University
Abstract:
Defects in the semiconductor structure of a photovoltaic converter (PVC) with a $p$–$n$ junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.
Received: 16.11.2018 Revised: 16.11.2018 Accepted: 21.11.2018
Citation:
V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 24–27; Tech. Phys. Lett., 45:2 (2019), 145–148
Linking options:
https://www.mathnet.ru/eng/pjtf5529 https://www.mathnet.ru/eng/pjtf/v45/i4/p24
|
Statistics & downloads: |
Abstract page: | 40 | Full-text PDF : | 10 |
|