Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 4, Pages 24–27
DOI: https://doi.org/10.21883/PJTF.2019.04.47332.17597 (Mi pjtf5529) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching

V. V. Tregulova, V. G. Litvinovb, A. V. Ermachikhinb

a Ryazan State University S. A. Esenin
b Ryazan State Radio Engineering University
Full-text PDF (105 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2019.04.47332.17597
Abstract: Defects in the semiconductor structure of a photovoltaic converter (PVC) with a $p$–$n$ junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.9506.2017/8.9
Received: 16.11.2018
Revised: 16.11.2018
Accepted: 21.11.2018
English version:
Technical Physics Letters, 2019, Volume 45, Issue 2, Pages 145–148
DOI: https://doi.org/10.1134/S1063785019020342
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 24–27; Tech. Phys. Lett., 45:2 (2019), 145–148
Citation in format AMSBIB
\Bibitem{TreLitErm19}
\by V.~V.~Tregulov, V.~G.~Litvinov, A.~V.~Ermachikhin
\paper Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 4
\pages 24--27
\mathnet{http://mi.mathnet.ru/pjtf5529}
\crossref{https://doi.org/10.21883/PJTF.2019.04.47332.17597}
\elib{https://elibrary.ru/item.asp?id=37481325}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 2
\pages 145--148
\crossref{https://doi.org/10.1134/S1063785019020342}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5529
  • https://www.mathnet.ru/eng/pjtf/v45/i4/p24
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:40
    Full-text PDF :10
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024