|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
O. V. Aleksandrov, S. A. Mokrushina, “Model of the effect of the gate bias on MOS structures under ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 189–194   ; Semiconductors, 54:2 (2020), 240–245 |
1
|
|
2018 |
| 2. |
O. V. Aleksandrov, S. A. Mokrushina, “Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 637–642 ; Semiconductors, 52:6 (2018), 783–788 |
3
|
|
| Organisations |
|
|
Contact us: