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Publications in Math-Net.Ru |
Citations |
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2020 |
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O. V. Aleksandrov, S. A. Mokrushina, “Model of the effect of the gate bias on MOS structures under ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 189–194   ; Semiconductors, 54:2 (2020), 240–245 |
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2018 |
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O. V. Aleksandrov, S. A. Mokrushina, “Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 637–642 ; Semiconductors, 52:6 (2018), 783–788 |
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