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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Model of the effect of the gate bias on MOS structures under ionizing radiation
O. V. Aleksandrov, S. A. Mokrushina Saint Petersburg Electrotechnical University "LETI"
Abstract:
A new quantitative model of the effect of the gate bias on the threshold voltage of metal-oxide-semiconductor (MOS) structures under ionizing irradiation is developed based on the consideration of hole trapping from the entire volume of the gate dielectric in a thin boundary layer with hydrogen-free and hydrogen-containing traps at the interface with a silicon substrate. The model makes it possible to adequately describe a gradual increase in the threshold voltage with gate bias as approximately linear with dose for the surface component and nonlinear for the bulk component. The threshold-voltage shift at negative gate bias is simulated based on hole generation in the boundary layer under ionizing irradiation.
Keywords:
ionizing irradiation, MOS structure, oxide traps, surface states, simulation.
Received: 25.06.2019 Revised: 10.09.2019 Accepted: 30.09.2019
Citation:
O. V. Aleksandrov, S. A. Mokrushina, “Model of the effect of the gate bias on MOS structures under ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 189–194; Semiconductors, 54:2 (2020), 240–245
Linking options:
https://www.mathnet.ru/eng/phts5285 https://www.mathnet.ru/eng/phts/v54/i2/p189
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