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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
M. S. Afanasiev, E. I. Goldman, G. V. Chucheva, A. E. Nabiyev, J. È. Huseynov, N. Sh. Aliev, “Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:1 (2020), 121–124   ; Phys. Solid State, 62:1 (2020), 164–167 |
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2019 |
| 2. |
E. I. Goldman, A. E. Nabiyev, V. G. Naryshkina, G. V. Chucheva, “On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92 ; Semiconductors, 53:1 (2019), 85–88 |
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2018 |
| 3. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, V. A. Luzanov, A. E. Nabiyev, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films”, Fizika Tverdogo Tela, 60:5 (2018), 951–954 ; Phys. Solid State, 60:5 (2018), 954–957 |
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2017 |
| 4. |
Kh. A. Hasanov, J. È. Huseynov, V. V. Dadashova, A. E. Nabiyev, I. I. Abbasov, “Phonon-Drag thermopower in a quantum wire with parabolic confinement potential for electrons”, Izv. Sarat. Univ. Physics, 17:4 (2017), 263–268 |
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2013 |
| 5. |
M. S. Afanasiev, S. A. Levashov, A. Yu. Mityagin, G. V. Chucheva, A. E. Nabiyev, “Calculation of thermal parameters and technology of formation MPL microwave range”, Izv. Sarat. Univ. Physics, 13:1 (2013), 9–12 |
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2012 |
| 6. |
G. V. Chucheva, M. S. Afanasiev, I. A. Anisimov, A. I. Georgieva, S. A. Levashov, A. E. Nabiyev, “Determining parameters of planar capacitors based of thin film ferroelectric materials”, Izv. Sarat. Univ. Physics, 12:2 (2012), 8–11 |
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2016 |
| 7. |
R. S. Madatov, A. S. Alekperov, A. E. Nabiyev, “Influence of Sm impurity atoms on the switching effect in thin films of GeS”, Izv. Sarat. Univ. Physics, 16:4 (2016), 212–217 |
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