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Publications in Math-Net.Ru |
Citations |
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2020 |
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G. S. Gagis, V. I. Vasil’ev, R. V. Levin, A. E. Marichev, B. V. Pushnii, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber, “Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24   ; Tech. Phys. Lett., 46:10 (2020), 961–963 |
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2019 |
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G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518 ; Semiconductors, 53:11 (2019), 1472–1478 |
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G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25 ; Tech. Phys. Lett., 45:10 (2019), 1031–1034 |
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2018 |
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V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, V. I. Kuchinskii, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, T. B. Popova, “A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 17–24 ; Tech. Phys. Lett., 44:12 (2018), 1127–1129 |
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2017 |
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V. I. Vasil’ev, G. S. Gagis, R. V. Levin, V. I. Kuchinskii, A. G. Deryagin, D. Yu. Kazantsev, B. Ya. Ber, “A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 78–86 ; Tech. Phys. Lett., 43:10 (2017), 905–908 |
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