Persons
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
 
Myasoedov, Aleksandr Vladimirovich

Statistics Math-Net.Ru
Total publications: 6
Scientific articles: 6

Number of views:
This page:100
Abstract pages:399
Full texts:121
Website: https://physmath.spbstu.ru/author/7658/

https://www.mathnet.ru/eng/person185366
List of publications on Google Scholar
List of publications on ZentralBlatt
https://elibrary.ru/author_items.asp?authorid=1169215

Publications in Math-Net.Ru Citations
2020
1. T. S. Argunova, Zh. V. Gudkina, M. Yu. Gutkin, D. V. Zaytsev, A. E. Kalmykov, A. V. Myasoedov, E. D. Nazarova, P. E. Panfilov, L. M. Sorokin, “Study of dentin structural features by computed microtomography and transmission electron microscopy”, Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020),  1449–1461  mathnet  elib; Tech. Phys., 65:9 (2020), 1391–1402 1
2. A. V. Myasoedov, A. V. Sakharov, A. E. Nikolaev, A. E. Kalmykov, L. M. Sorokin, V. V. Lundin, “A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  50–54  mathnet  elib; Tech. Phys. Lett., 46:10 (2020), 991–995 1
3. A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Zhmerik, “An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  26–30  mathnet  elib; Tech. Phys. Lett., 46:6 (2020), 543–547 1
4. V. V. Ratnikov, D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev, V. N. Zhmerik, “Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  36–39  mathnet  elib; Tech. Phys. Lett., 46:4 (2020), 389–392
2019
5. L. M. Sorokin, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov, V. N. Bessolov, S. A. Kukushkin, “Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers”, Fizika Tverdogo Tela, 61:12 (2019),  2317–2321  mathnet  elib; Phys. Solid State, 61:12 (2019), 2316–2320 1
2018
6. A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, “Asymmetry of the defect structure of semipolar GaN grown on Si(001)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018),  53–61  mathnet  elib; Tech. Phys. Lett., 44:10 (2018), 926–929 1

Organisations
 
  Contact us:
 Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024