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Publications in Math-Net.Ru |
Citations |
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2020 |
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T. S. Argunova, Zh. V. Gudkina, M. Yu. Gutkin, D. V. Zaytsev, A. E. Kalmykov, A. V. Myasoedov, E. D. Nazarova, P. E. Panfilov, L. M. Sorokin, “Study of dentin structural features by computed microtomography and transmission electron microscopy”, Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020), 1449–1461 ; Tech. Phys., 65:9 (2020), 1391–1402 |
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A. V. Myasoedov, A. V. Sakharov, A. E. Nikolaev, A. E. Kalmykov, L. M. Sorokin, V. V. Lundin, “A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 50–54 ; Tech. Phys. Lett., 46:10 (2020), 991–995 |
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A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Zhmerik, “An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 26–30 ; Tech. Phys. Lett., 46:6 (2020), 543–547 |
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V. V. Ratnikov, D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev, V. N. Zhmerik, “Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 36–39 ; Tech. Phys. Lett., 46:4 (2020), 389–392 |
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2019 |
5. |
L. M. Sorokin, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov, V. N. Bessolov, S. A. Kukushkin, “Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers”, Fizika Tverdogo Tela, 61:12 (2019), 2317–2321 ; Phys. Solid State, 61:12 (2019), 2316–2320 |
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2018 |
6. |
A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, “Asymmetry of the defect structure of semipolar GaN grown on Si(001)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 53–61 ; Tech. Phys. Lett., 44:10 (2018), 926–929 |
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Organisations |
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