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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 19, Pages 50–54
DOI: https://doi.org/10.21883/PJTF.2020.19.50047.18457 (Mi pjtf4983) 		 
This article is cited in 1 scientific paper (total in 1 paper)

A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates

A. V. Myasoedov, A. V. Sakharov, A. E. Nikolaev, A. E. Kalmykov, L. M. Sorokin, V. V. Lundin

Ioffe Institute, St. Petersburg
Full-text PDF (1099 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2020.19.50047.18457
Abstract: By transmission electron microscopy are studied two buffer structures based on AlGaN alloys doped with silicon and don't. The structures were grown on (111) orientated Si substrates by metal-organic vapour-phase epitaxy with consistently decreasing Al content. It is found that noticeable threading dislocation density reduction took place in intermediate layers at changing Al concentration from 32 to 23%. A phase decay and a composition modulation in growth direction in AlGaN layers with Al content 32, 23, 12 and 4% are observed. A model of the layers structure in the composition modulation area is proposed.
Keywords: threading dislocations, transmission electron microscopy, metalorganic vapour-phase epitaxy, compositional modulation.
Received: 08.07.2020
Revised: 08.07.2020
Accepted: 10.07.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 10, Pages 991–995
DOI: https://doi.org/10.1134/S1063785020100119
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Myasoedov, A. V. Sakharov, A. E. Nikolaev, A. E. Kalmykov, L. M. Sorokin, V. V. Lundin, “A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 50–54; Tech. Phys. Lett., 46:10 (2020), 991–995
Citation in format AMSBIB
\Bibitem{MyaSakNik20}
\by A.~V.~Myasoedov, A.~V.~Sakharov, A.~E.~Nikolaev, A.~E.~Kalmykov, L.~M.~Sorokin, V.~V.~Lundin
\paper A TEM study of AlN--AlGaN--GaN multilayer buffer structures on silicon substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 19
\pages 50--54
\mathnet{http://mi.mathnet.ru/pjtf4983}
\crossref{https://doi.org/10.21883/PJTF.2020.19.50047.18457}
\elib{https://elibrary.ru/item.asp?id=44257991}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 10
\pages 991--995
\crossref{https://doi.org/10.1134/S1063785020100119}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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