Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 20, Pages 53–61
DOI: https://doi.org/10.21883/PJTF.2018.20.46806.17452
(Mi pjtf5666)
 

This article is cited in 1 scientific paper (total in 1 paper)

Asymmetry of the defect structure of semipolar GaN grown on Si(001)

A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin

Ioffe Institute, St. Petersburg
Full-text PDF (445 kB) Citations (1)
Abstract: The defect structure of a thick ($\sim$15 $\mu$m) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation RFMEFI62117X0018
Received: 05.07.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 10, Pages 926–929
DOI: https://doi.org/10.1134/S1063785018100267
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, “Asymmetry of the defect structure of semipolar GaN grown on Si(001)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 53–61; Tech. Phys. Lett., 44:10 (2018), 926–929
Citation in format AMSBIB
\Bibitem{KalMyaSor18}
\by A.~E.~Kalmykov, A.~V.~Myasoedov, L.~M.~Sorokin
\paper Asymmetry of the defect structure of semipolar GaN grown on Si(001)
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 20
\pages 53--61
\mathnet{http://mi.mathnet.ru/pjtf5666}
\crossref{https://doi.org/10.21883/PJTF.2018.20.46806.17452}
\elib{https://elibrary.ru/item.asp?id=36905901}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 10
\pages 926--929
\crossref{https://doi.org/10.1134/S1063785018100267}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5666
  • https://www.mathnet.ru/eng/pjtf/v44/i20/p53
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:56
    Full-text PDF :12
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024