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This article is cited in 1 scientific paper (total in 1 paper)
Asymmetry of the defect structure of semipolar GaN grown on Si(001)
A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin Ioffe Institute, St. Petersburg
Abstract:
The defect structure of a thick ($\sim$15 $\mu$m) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.
Received: 05.07.2018
Citation:
A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, “Asymmetry of the defect structure of semipolar GaN grown on Si(001)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 53–61; Tech. Phys. Lett., 44:10 (2018), 926–929
Linking options:
https://www.mathnet.ru/eng/pjtf5666 https://www.mathnet.ru/eng/pjtf/v44/i20/p53
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