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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 7–10   |
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2020 |
| 2. |
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, Sh. Sh. Sharofidinov, “Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 22–25 ; Tech. Phys. Lett., 46:6 (2020), 539–542 |
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2019 |
| 3. |
A. V. Redkov, “Growth of a faceted pore in a crystal via Burton–Cabrera–Frank mechanism”, Fizika Tverdogo Tela, 61:12 (2019), 2385–2389 ; Phys. Solid State, 61:12 (2019), 2392–2396 |
3
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| 4. |
A. V. Redkov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, K. P. Kotlyar, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, “Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution”, Fizika Tverdogo Tela, 61:3 (2019), 433–440 ; Phys. Solid State, 61:3 (2019), 299–306 |
15
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| 5. |
Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Redkov, A. S. Grashchenko, A. V. Osipov, “Growing III–V semiconductor heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 24–27 ; Tech. Phys. Lett., 45:7 (2019), 711–713 |
16
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2018 |
| 6. |
Yu. È. Kitaev, S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “A new trigonal (rhombohedral) sic phase: ab initio calculations, a symmetry analysis and the Raman spectra”, Fizika Tverdogo Tela, 60:10 (2018), 2022–2027 ; Phys. Solid State, 60:10 (2018), 2066–2071 |
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2017 |
| 7. |
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 414–420 ; Semiconductors, 51:3 (2017), 396–401 |
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2016 |
| 8. |
A. V. Redkov, A. V. Osipov, S. A. Kukushkin, “Molecular dynamics simulation of the indentation of nanoscale films on a substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 64–72 ; Tech. Phys. Lett., 42:6 (2016), 639–643 |
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