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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. S. Ezubchenko, M. Y. Chernykh, P. A. Perminov, Yu. V. Grishchenko, I. N. Trunkin, I. A. Chernykh, M. L. Zanaveskin, “Gan-on-silicon growth features: controlled plastic deformation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 26–29   ; Tech. Phys. Lett., 47:10 (2021), 705–708 |
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2020 |
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I. A. Chernykh, S. M. Romanovskiy, A. A. Andreev, I. S. Ezubchenko, M. Y. Chernykh, Yu. V. Grishchenko, I. O. Mayboroda, S. V. Korneev, M. M. Krymko, M. L. Zanaveskin, V. Ph. Sinkevich, “Power characteristics of GaN microwave transistors on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 11–14 ; Tech. Phys. Lett., 46:3 (2020), 211–214 |
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2019 |
| 3. |
I. V. Kulikov, M. Y. Chernykh, T. S. Krylova, A. V. Ovcharov, I. A. Chernykh, M. L. Zanaveskin, “A superconducting joint for 2G HTS tapes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 18–20 ; Tech. Phys. Lett., 45:4 (2019), 324–326 |
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| 4. |
A. A. Andreev, Yu. V. Grishchenko, I. S. Ezubchenko, M. Y. Chernykh, E. M. Kolobkova, I. O. Mayboroda, I. A. Chernykh, M. L. Zanaveskin, “Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 52–54 ; Tech. Phys. Lett., 45:2 (2019), 173–175 |
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