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This article is cited in 1 scientific paper (total in 1 paper)
Power characteristics of GaN microwave transistors on silicon substrates
I. A. Chernykha, S. M. Romanovskiyb, A. A. Andreeva, I. S. Ezubchenkoa, M. Y. Chernykha, Yu. V. Grishchenkoa, I. O. Mayborodaa, S. V. Korneevb, M. M. Krymkob, M. L. Zanaveskina, V. Ph. Sinkevichb a National Research Centre "Kurchatov Institute", Moscow
b Joint-Stock Company "Scientific and Production Enterprise Pulsar", Moscow
Abstract:
GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.
Keywords:
high electron mobility transistor (HEMT), microwave electronics, nitride heterostructure, gallium nitride (GaN), semiconductor materials,
silicon (Si).
Received: 10.10.2019 Revised: 26.11.2019 Accepted: 28.11.2019
Citation:
I. A. Chernykh, S. M. Romanovskiy, A. A. Andreev, I. S. Ezubchenko, M. Y. Chernykh, Yu. V. Grishchenko, I. O. Mayboroda, S. V. Korneev, M. M. Krymko, M. L. Zanaveskin, V. Ph. Sinkevich, “Power characteristics of GaN microwave transistors on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 11–14; Tech. Phys. Lett., 46:3 (2020), 211–214
Linking options:
https://www.mathnet.ru/eng/pjtf5165 https://www.mathnet.ru/eng/pjtf/v46/i5/p11
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