Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 5, Pages 11–14
DOI: https://doi.org/10.21883/PJTF.2020.05.49100.18068 (Mi pjtf5165) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Power characteristics of GaN microwave transistors on silicon substrates

I. A. Chernykha, S. M. Romanovskiyb, A. A. Andreeva, I. S. Ezubchenkoa, M. Y. Chernykha, Yu. V. Grishchenkoa, I. O. Mayborodaa, S. V. Korneevb, M. M. Krymkob, M. L. Zanaveskina, V. Ph. Sinkevichb

a National Research Centre "Kurchatov Institute", Moscow
b Joint-Stock Company "Scientific and Production Enterprise Pulsar", Moscow
Full-text PDF (456 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2020.05.49100.18068
Abstract: GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.
Keywords: high electron mobility transistor (HEMT), microwave electronics, nitride heterostructure, gallium nitride (GaN), semiconductor materials, silicon (Si).
Funding agency Grant number
National Research Centre "Kurchatov Institute" 1359
This study was supported by the National Research Centre Kurchatov Institute, order no. 1359, June 25, 2019.
Received: 10.10.2019
Revised: 26.11.2019
Accepted: 28.11.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 3, Pages 211–214
DOI: https://doi.org/10.1134/S1063785020030050
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. A. Chernykh, S. M. Romanovskiy, A. A. Andreev, I. S. Ezubchenko, M. Y. Chernykh, Yu. V. Grishchenko, I. O. Mayboroda, S. V. Korneev, M. M. Krymko, M. L. Zanaveskin, V. Ph. Sinkevich, “Power characteristics of GaN microwave transistors on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 11–14; Tech. Phys. Lett., 46:3 (2020), 211–214
Citation in format AMSBIB
\Bibitem{CheRomAnd20}
\by I.~A.~Chernykh, S.~M.~Romanovskiy, A.~A.~Andreev, I.~S.~Ezubchenko, M.~Y.~Chernykh, Yu.~V.~Grishchenko, I.~O.~Mayboroda, S.~V.~Korneev, M.~M.~Krymko, M.~L.~Zanaveskin, V.~Ph.~Sinkevich
\paper Power characteristics of GaN microwave transistors on silicon substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 5
\pages 11--14
\mathnet{http://mi.mathnet.ru/pjtf5165}
\crossref{https://doi.org/10.21883/PJTF.2020.05.49100.18068}
\elib{https://elibrary.ru/item.asp?id=42776928}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 3
\pages 211--214
\crossref{https://doi.org/10.1134/S1063785020030050}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5165
  • https://www.mathnet.ru/eng/pjtf/v46/i5/p11
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024