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This article is cited in 3 scientific papers (total in 3 papers)
Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
A. A. Andreev, Yu. V. Grishchenko, I. S. Ezubchenko, M. Y. Chernykh, E. M. Kolobkova, I. O. Mayboroda, I. A. Chernykh, M. L. Zanaveskin National Research Centre "Kurchatov Institute", Moscow
Abstract:
sAmmonia molecular-beam epitaxy has been used to grow gallium nitride (GaN) transistor heterostructures on sapphire and silicon substrates. GaN transistors with a 1.2-mm periphery fabricated on substrates of both types exhibited similar high static characteristics: saturation current density above 0.75 A/mm, transconductance above 300 mS/mm, and breakdown voltage above 120 V. Measurements of the small-signal parameters showed that transistors based on silicon substrates possessed high gain in a frequency range up to 5 GHz; the specific output power at 1 GHz amounted to 5 W/mm for transistors on sapphire substrate and 2 W/mm for transistors on silicon substrate.
Received: 22.10.2018 Revised: 26.10.2018 Accepted: 28.10.2018
Citation:
A. A. Andreev, Yu. V. Grishchenko, I. S. Ezubchenko, M. Y. Chernykh, E. M. Kolobkova, I. O. Mayboroda, I. A. Chernykh, M. L. Zanaveskin, “Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 52–54; Tech. Phys. Lett., 45:2 (2019), 173–175
Linking options:
https://www.mathnet.ru/eng/pjtf5537 https://www.mathnet.ru/eng/pjtf/v45/i4/p52
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