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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
N. K. Chumakov, A. A. Andreev, I. V. Belov, A. B. Davydov, I. S. Ezubchenko, L. L. Lev, L. A. Morgun, S. N. Nikolaev, I. A. Chernykh, S. Yu. Shabanov, V. N. Strokov, V. G. Valeyev, “Magnetoresistance and symmetry of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024), 598–603  ; JETP Letters, 119:8 (2024), 604–609 |
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2021 |
| 2. |
I. S. Ezubchenko, M. Y. Chernykh, P. A. Perminov, Yu. V. Grishchenko, I. N. Trunkin, I. A. Chernykh, M. L. Zanaveskin, “Gan-on-silicon growth features: controlled plastic deformation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 26–29  ; Tech. Phys. Lett., 47:10 (2021), 705–708 |
| 3. |
I. O. Mayboroda, I. A. Chernykh, V. S. Sedov, A. Altakhov, A. A. Andreev, Yu. V. Grishchenko, E. M. Kolobkova, A. K. Martyanov, V. I. Konov, M. L. Zanaveskin, “Substrates with diamond heat sink for epitaxial GaN growth”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 13–16 ; Tech. Phys. Lett., 47:5 (2021), 353–356 |
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2020 |
| 4. |
N. K. Chumakov, I. A. Chernykh, A. B. Davydov, I. S. Ezubchenko, Yu. V. Grishchenko, L. L. Lev, I. O. Mayboroda, L. A. Morgun, V. N. Strokov, V. G. Valeev, M. L. Zanaveskin, “Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 962–967 ; Semiconductors, 54:9 (2020), 1150–1154 |
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I. A. Chernykh, S. M. Romanovskiy, A. A. Andreev, I. S. Ezubchenko, M. Y. Chernykh, Yu. V. Grishchenko, I. O. Mayboroda, S. V. Korneev, M. M. Krymko, M. L. Zanaveskin, V. Ph. Sinkevich, “Power characteristics of GaN microwave transistors on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 11–14 ; Tech. Phys. Lett., 46:3 (2020), 211–214 |
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2019 |
| 6. |
A. A. Andreev, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin, È. F. Lobanovich, “Ohmic contacts to europium oxide for spintronic devices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 38–40 ; Tech. Phys. Lett., 45:4 (2019), 345–347 |
| 7. |
I. V. Kulikov, M. Y. Chernykh, T. S. Krylova, A. V. Ovcharov, I. A. Chernykh, M. L. Zanaveskin, “A superconducting joint for 2G HTS tapes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 18–20 ; Tech. Phys. Lett., 45:4 (2019), 324–326 |
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| 8. |
A. A. Andreev, Yu. V. Grishchenko, I. S. Ezubchenko, M. Y. Chernykh, E. M. Kolobkova, I. O. Mayboroda, I. A. Chernykh, M. L. Zanaveskin, “Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 52–54 ; Tech. Phys. Lett., 45:2 (2019), 173–175 |
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2018 |
| 9. |
I. O. Mayboroda, Yu. V. Grishchenko, I. S. Ezubchenko, I. S. Sokolov, I. A. Chernykh, A. A. Andreev, M. L. Zanaveskin, “Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 630–636 ; Semiconductors, 52:6 (2018), 776–782 |
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