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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. O. Mayboroda, I. A. Chernykh, V. S. Sedov, A. Altakhov, A. A. Andreev, Yu. V. Grishchenko, E. M. Kolobkova, A. K. Martyanov, V. I. Konov, M. L. Zanaveskin, “Substrates with diamond heat sink for epitaxial GaN growth”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 13–16   ; Tech. Phys. Lett., 47:5 (2021), 353–356 |
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2020 |
| 2. |
D. A. Chernodubov, I. O. Mayboroda, M. L. Zanaveskin, A. V. Inyushkin, “Specifics of heat transfer in Al$_{x}$Ga$_{1-x}$N/GaN heterostructures on sapphire”, Fizika Tverdogo Tela, 62:4 (2020), 635–639 ; Phys. Solid State, 62:4 (2020), 722–726 |
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| 3. |
N. K. Chumakov, I. A. Chernykh, A. B. Davydov, I. S. Ezubchenko, Yu. V. Grishchenko, L. L. Lev, I. O. Mayboroda, L. A. Morgun, V. N. Strokov, V. G. Valeev, M. L. Zanaveskin, “Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 962–967 ; Semiconductors, 54:9 (2020), 1150–1154 |
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I. A. Chernykh, S. M. Romanovskiy, A. A. Andreev, I. S. Ezubchenko, M. Y. Chernykh, Yu. V. Grishchenko, I. O. Mayboroda, S. V. Korneev, M. M. Krymko, M. L. Zanaveskin, V. Ph. Sinkevich, “Power characteristics of GaN microwave transistors on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 11–14 ; Tech. Phys. Lett., 46:3 (2020), 211–214 |
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2019 |
| 5. |
A. A. Andreev, Yu. V. Grishchenko, I. S. Ezubchenko, M. Y. Chernykh, E. M. Kolobkova, I. O. Mayboroda, I. A. Chernykh, M. L. Zanaveskin, “Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 52–54 ; Tech. Phys. Lett., 45:2 (2019), 173–175 |
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2018 |
| 6. |
I. O. Mayboroda, Yu. V. Grishchenko, I. S. Ezubchenko, I. S. Sokolov, I. A. Chernykh, A. A. Andreev, M. L. Zanaveskin, “Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 630–636 ; Semiconductors, 52:6 (2018), 776–782 |
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2017 |
| 7. |
A. A. Andreev, E. A. Vavilova, I. S. Ezubchenko, M. L. Zanaveskin, I. O. Mayboroda, “Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure”, Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017), 1275–1278 ; Tech. Phys., 62:8 (2017), 1288–1291 |
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