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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
Z. A. Isakhanov, B. E. Umirzakov, S. S. Nasriddinov, Z. E. Ìuhtarov, R. M. Yorkulov, “Study of the critical angle of channeling of active metal ions through thin aluminum films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021), 12–14   |
| 2. |
B. E. Umirzakov, Z. A. Isakhanov, G. Kh. Allayarova, R. M. Yorkulov, “The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021), 15–19 ; Tech. Phys. Lett., 47:1 (2021), 11–15 |
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2020 |
| 3. |
Z. A. Isakhanov, I. O. Kosimov, B. E. Umirzakov, R. M. Yorkulov, “Modification of the surface properties of free Si–Cu films by implantation of active metal ions”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 123–127 ; Tech. Phys., 65:1 (2020), 114–117 |
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2019 |
| 4. |
B. E. Umirzakov, M. K. Ruzibaeva, Z. A. Isakhanov, R. M. Yorkulov, “Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 935–937 ; Tech. Phys., 64:6 (2019), 881–883 |
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2016 |
| 5. |
Y. S. Ergashov, Z. A. Isakhanov, B. E. Umirzakov, “Transmission of electromagnetic waves through thin Cu films”, Zhurnal Tekhnicheskoi Fiziki, 86:6 (2016), 156–158 ; Tech. Phys., 61:6 (2016), 953–955 |
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