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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, A. A. Zaitsev, V. I. Garmash, “Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1260–1263   |
| 2. |
R. A. Khabibullin, K. V. Marem'yanin, D. S. Ponomarev, R. R. Galiev, A. A. Zaitsev, A. I. Danilov, I. S. Vasil'evskii, A. N. Vinichenko, A. N. Klochkov, A. A. Afonenko, D. V. Ushakov, S. V. Morozov, V. I. Gavrilenko, “3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 989–994 |
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| 3. |
V. I. Egorkin, S. V. Obolensky, V. E. Zemlyakov, A. A. Zaitsev, V. I. Garmash, “Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 15–17 |
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2020 |
| 4. |
G. B. Galiev, E. A. Klimov, A. A. Zaitsev, S. S. Pushkarev, A. N. Klochkov, “Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates”, Optics and Spectroscopy, 128:7 (2020), 877–884 ; Optics and Spectroscopy, 128:7 (2020), 877–884 |
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| 5. |
G. B. Galiev, E. A. Klimov, S. S. Pushkarev, A. A. Zaitsev, A. N. Klochkov, “Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1203–1210 ; Semiconductors, 54:11 (2020), 1417–1423 |
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2019 |
| 6. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2018 |
| 7. |
R. A. Khabibullin, N. V. Shchavruk, D. S. Ponomarev, D. V. Ushakov, A. A. Afonenko, I. S. Vasil'evskii, A. A. Zaitsev, A. I. Danilov, O. Yu. Volkov, V. V. Pavlovskiy, K. V. Marem'yanin, V. I. Gavrilenko, “Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1268–1273 ; Semiconductors, 52:11 (2018), 1380–1385 |
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2017 |
| 8. |
R. A. Khabibullin, N. V. Shchavruk, A. N. Klochkov, I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev, P. P. Maltsev, A. A. Zaitsev, F. I. Zubov, A. E. Zhukov, G. E. Cirlin, Zh. I. Alferov, “Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546 ; Semiconductors, 51:4 (2017), 514–519 |
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