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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. G. Verkholetov, I. A. Prudaev, “Effect of barrier contacts on carrier transport in homogeneous GaAs structures doped with deep Cr and EL$_2$ centers”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 693–698   ; Semiconductors, 55:9 (2021), 705–709 |
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2019 |
| 2. |
I. A. Prudaev, M. G. Verkholetov, “Nonlinearity of current-voltage characteristics of homogeneous compensated GaAs detector structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 37–40 ; Tech. Phys. Lett., 45:6 (2019), 566–569 |
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2018 |
| 3. |
I. A. Prudaev, M. G. Verkholetov, A. D. Koroleva, O. P. Tolbanov, “Charge carrier transport and deep levels recharge in avalanche $S$-diodes based on GaAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018), 21–29 ; Tech. Phys. Lett., 44:6 (2018), 465–468 |
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2017 |
| 4. |
I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik, “On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 240–246 ; Semiconductors, 51:2 (2017), 232–238 |
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2016 |
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V. M. Kalygina, I. M. Egorova, V. À. Novikov, I. A. Prudaev, O. P. Tolbanov, “Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1178–1184 ; Semiconductors, 50:9 (2016), 1156–1162 |
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| 6. |
V. M. Kalygina, I. M. Egorova, I. A. Prudaev, O. P. Tolbanov, “Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1036–1040 ; Semiconductors, 50:8 (2016), 1015–1019 |
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