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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 240–246
DOI: https://doi.org/10.21883/FTP.2017.02.44112.8251 (Mi phts6240) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik

Tomsk State University
Full-text PDF (190 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2017.02.44112.8251
Abstract: The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.
Received: 29.03.2016
Accepted: 07.04.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 232–238
DOI: https://doi.org/10.1134/S1063782617020166
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik, “On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 240–246; Semiconductors, 51:2 (2017), 232–238
Citation in format AMSBIB
\Bibitem{PruKopRom17}
\by I.~A.~Prudaev, V.~V.~Kopyev, I.~S.~Romanov, V.~L.~Oleynik
\paper On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 240--246
\mathnet{http://mi.mathnet.ru/phts6240}
\crossref{https://doi.org/10.21883/FTP.2017.02.44112.8251}
\elib{https://elibrary.ru/item.asp?id=29006005}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 232--238
\crossref{https://doi.org/10.1134/S1063782617020166}
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  • https://www.mathnet.ru/eng/phts/v51/i2/p240
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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