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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1178–1184
(Mi phts6358)
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This article is cited in 2 scientific papers (total in 2 papers)
Surface, interfaces, thin films
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures
V. M. Kalygina, I. M. Egorova, V. А. Novikov, I. A. Prudaev, O. P. Tolbanov Tomsk State University
Abstract:
The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO$_{2}$–Si structures is investigated. The titanium oxide films are prepared by rf magnetron sputtering onto n-Si substrates. The observed features in the behavior of the electrical and photoelectric characteristics of the samples after annealing and treatment in oxygen plasma are attributed to a variation in the phase composition of the oxide film due to the appearance of anatase or rutile crystallites, depending on the treatment conditions.
Received: 16.02.2016 Accepted: 24.02.2016
Citation:
V. M. Kalygina, I. M. Egorova, V. А. Novikov, I. A. Prudaev, O. P. Tolbanov, “Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1178–1184; Semiconductors, 50:9 (2016), 1156–1162
Linking options:
https://www.mathnet.ru/eng/phts6358 https://www.mathnet.ru/eng/phts/v50/i9/p1178
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Abstract page: | 41 | Full-text PDF : | 16 |
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