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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov, I. A. Morozov, A. I. Baranov, A. O. Monastyrenko, A. S. Gudovskikh, “Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 360–364   ; Semiconductors, 55:4 (2021), 410–414 |
| 2. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, A. O. Monastyrenko, “Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 31–33 |
| 3. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, K. Yu. Shugurov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 47–50 |
| 4. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 24–27 ; Tech. Phys. Lett., 47:11 (2021), 785–788 |
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| 5. |
A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54 ; Tech. Phys. Lett., 47:10 (2021), 730–733 |
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2020 |
| 6. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 37–40 ; Tech. Phys. Lett., 46:12 (2020), 1245–1248 |
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