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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
R. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. Thewalt, “Thermal activation of valley-orbit states of neutral magnesium in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 500  |
| 2. |
Yu. A. Astrov, L. M. Portsel', V. B. Shuman, A. N. Lodygin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, “Optical cross sections and oscillation strengths of magnesium double donor in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 299–303  |
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2020 |
| 3. |
K. A. Kovalevsky, Yu. Yu. Choporova, R. Kh. Zhukavin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin, “Relaxation of the excited states of arsenic in strained germanium”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1145–1149 ; Semiconductors, 54:10 (2020), 1347–1351 |
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| 4. |
R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821 ; Semiconductors, 54:8 (2020), 969–974 |
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2019 |
| 5. |
R. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin, “Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1285–1288 ; Semiconductors, 53:9 (2019), 1255–1257 |
| 6. |
V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, H.-W. Hübers, “Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1263–1266 ; Semiconductors, 53:9 (2019), 1234–1237 |
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2018 |
| 7. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, H.-W. Hübers, V. I. Gavrilenko, “Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1257–1262 ; Semiconductors, 52:11 (2018), 1369–1374 |
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2016 |
| 8. |
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin, “Polarization of the induced THz emission of donors in silicon”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1701–1705 ; Semiconductors, 50:12 (2016), 1673–1677 |
| 9. |
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin, “Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1479–1483 ; Semiconductors, 50:11 (2016), 1458–1462 |
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