|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710   ; Semiconductors, 55:12 (2021), 995–1001 |
| 2. |
P. V. Seredin, D. L. Goloshchapov, Yu. Yu. Khudyakov, I. N. Arsent'ev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, H. Leiste, “Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 86–95 ; Semiconductors, 55:1 (2021), 122–131 |
1
|
|
2020 |
| 3. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin, “Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503 ; Semiconductors, 54:5 (2020), 596–608 |
3
|
|
2018 |
| 4. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke, “Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562 ; Semiconductors, 52:13 (2018), 1653–1661 |
2
|
| 5. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, N. A. Pikhtin, “Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 881–890 ; Semiconductors, 52:8 (2018), 1012–1021 |
3
|
|
2017 |
| 6. |
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1160–1167 ; Semiconductors, 51:9 (2017), 1111–1118 |
1
|
| 7. |
P. V. Seredin, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, N. A. Kalyuzhnyy, S. A. Mintairov, D. N. Nikolaev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1131–1137 ; Semiconductors, 51:8 (2017), 1087–1092 |
1
|
|
| Organisations |
|
| |
|
|
Contact us: