Khavrov, Gleb Dmitrievich. Strukturnye osobennosti tonkikh plenok monosulfidov lantanoidov [Elektronnyi resurs]: magisterskaya dissertatsiya: 22.04.01 / G. D. Khavrov; Sankt-Peterburgskii politekhnicheskii universitet Petra Velikogo, Institut metallurgii, mashinostroeniya i transporta ; nauch. ruk. N. V. Sharenkova.
V. V. Kaminskii, S. M. Soloviev, N. N. Stepanov, G. A. Kamenskaja, G. D. Khavrov, S. E. Alexandrov, “Thin-film baroresistors based on Sm$_{1-x}$Gd$_{x}$S solid solutions”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 28–31; Semiconductors, 55:1 (2021), 25–27
2018
2.
V. V. Kaminskii, S. M. Soloviev, G. D. Khavrov, N. V. Sharenkova, “Mechanism of the semiconductor–metal phase transition in Sm$_{1-x}$ Gd$_{x}$S thin films”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 45–47; Semiconductors, 52:1 (2018), 41–43
V. V. Kaminskii, S. M. Solov'ev, G. D. Khavrov, N. V. Sharenkova, Shinji Hirai, “Structural features of Sm$_{1-x}$Eu$_{x}$S thin polycrystalline films”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 860; Semiconductors, 51:6 (2017), 828–830
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