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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. Yu. Davydov, O. V. Posrednik, “On the nature of red shift of the Raman $G$ peak in an epitaxial two-dimensional layer”, Fizika Tverdogo Tela, 63:4 (2021), 550–553   ; Phys. Solid State, 63:4 (2021), 530–533 |
| 2. |
S. Yu. Davydov, O. V. Posrednik, “Elastic properties of graphene-like compounds: the Keating's and Harisson's models”, Fizika Tverdogo Tela, 63:2 (2021), 304–307 ; Phys. Solid State, 63:2 (2021), 368–371 |
| 3. |
S. Yu. Davydov, O. V. Posrednik, “Model of a “Two-dimensional metal–graphene-like compound” junction: consideration for interaction between the components”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 578–583 ; Semiconductors, 55:7 (2021), 595–600 |
| 4. |
S. Yu. Davydov, O. V. Posrednik, “Adsorption of II and VI groups atoms on the silicon carbide polytypes”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 326–330 ; Semiconductors, 55:4 (2021), 399–404 |
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| 5. |
S. Yu. Davydov, O. V. Posrednik, “The Schottky barrier on a contact of a magnetic 3$d$ metal with a semiconductor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 37–39 ; Tech. Phys. Lett., 47:7 (2021), 550–552 |
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| 6. |
S. Yu. Davydov, O. V. Posrednik, “The role of Coulomb interaction in the defect model of a Schottky barrier”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 28–30 ; Tech. Phys. Lett., 47:3 (2021), 234–236 |
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2020 |
| 7. |
S. Yu. Davydov, O. V. Posrednik, “Adsorption of Ga and Cl atoms and GaCl molecule on silicon carbide: model approach”, Fizika Tverdogo Tela, 62:2 (2020), 298–301 ; Phys. Solid State, 62:2 (2020), 350–353 |
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| 8. |
S. Yu. Davydov, O. V. Posrednik, “Adsorption of I and VII groups atoms on the silicon carbide polytypes”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1197–1202 ; Semiconductors, 54:11 (2020), 1410–1416 |
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| 9. |
S. Yu. Davydov, O. V. Posrednik, “Adsorption of barium atoms on silicon carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 16–19 ; Tech. Phys. Lett., 46:1 (2020), 12–15 |
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2019 |
| 10. |
S. Yu. Davydov, O. V. Posrednik, “On the gases adsorption on silicon carbide: simple estimates”, Fizika Tverdogo Tela, 61:8 (2019), 1538–1541 ; Phys. Solid State, 61:8 (2019), 1490–1493 |
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2017 |
| 11. |
S. Yu. Davydov, O. V. Posrednik, “Influence of adsorption on the work function and conductivity of carbon nanostructures: Inconsistency of experimental data”, Zhurnal Tekhnicheskoi Fiziki, 87:4 (2017), 635–638 ; Tech. Phys., 62:4 (2017), 656–659 |
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2016 |
| 12. |
S. Yu. Davydov, O. V. Posrednik, “Estimations of the spontaneous polarization of binary and ternary compounds of group III nitrides”, Fizika Tverdogo Tela, 58:4 (2016), 630–632 ; Phys. Solid State, 58:4 (2016), 647–649 |
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