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This article is cited in 1 scientific paper (total in 1 paper)
Micro- and nanocrystalline, porous, composite semiconductors
Adsorption of II and VI groups atoms on the silicon carbide polytypes
S. Yu. Davydova, O. V. Posrednikb a Ioffe Institute, St. Petersburg, Russia
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
Abstract:
Within the scope of the Haldane-Anderson model the estimates of charge transfer and adsorption energy for alkali metals and halogens atoms on the С- and Si-faces of 3$C$-, 6$H$- and 4$H$-SiC polytypes are obtained. Band and local states contributions to the formation of adatom's charge and ionic and metallic parts of the adsorption energy are clarified.
Keywords:
adatom, charge transfer, adsorption energy.
Received: 30.10.2020 Revised: 14.11.2020 Accepted: 14.12.2020
Citation:
S. Yu. Davydov, O. V. Posrednik, “Adsorption of II and VI groups atoms on the silicon carbide polytypes”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 326–330; Semiconductors, 55:4 (2021), 399–404
Linking options:
https://www.mathnet.ru/eng/phts5052 https://www.mathnet.ru/eng/phts/v55/i4/p326
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