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This article is cited in 1 scientific paper (total in 1 paper)
The Schottky barrier on a contact of a magnetic 3$d$ metal with a semiconductor
S. Yu. Davydova, O. V. Posrednikb a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Abstract:
Analytical expressions for the charge (electron or hole) transfer between a metal and a semiconductor and for the Schottky barrier height are obtained using the Friedel model for the $d$ band of a transition metal and the local defect model for a semiconductor. It is shown that taking into account the metal magnetization enhances the charge transfer and the related contribution to the Schottky barrier height. Numerical estimates are presented for Co and Ni contacts with 6$H$ and 4$H$ SiC polytypes.
Keywords:
magnetic metal, semiconductor, local defect, charge transfer, Schottky barrier height.
Received: 09.12.2020 Revised: 09.03.2021 Accepted: 10.03.2021
Citation:
S. Yu. Davydov, O. V. Posrednik, “The Schottky barrier on a contact of a magnetic 3$d$ metal with a semiconductor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 37–39; Tech. Phys. Lett., 47:7 (2021), 550–552
Linking options:
https://www.mathnet.ru/eng/pjtf4775 https://www.mathnet.ru/eng/pjtf/v47/i11/p37
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